Air-gap type ???? fabrication method using poly-Silicon sacrificial layer and Etching-stop wall and FBAR fabricated by the same,申请号KR20030033747-传众专利搜索

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发明名称	Air-gap type ???? fabrication method using poly-Silicon sacrificial layer and Etching-stop wall and FBAR fabricated by the same
摘要
申请公布号	KR100470711(B1)	申请公布日期	2005.03.10
申请号	KR20030033747	申请日期	2003.05.27
申请人		发明人
分类号	H03H9/24;(IPC1-7):H03H9/24	主分类号	H03H9/24
代理机构		代理人
主权项
地址

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