发明名称 ETCHING METHOD, SURFACE ACOUSTIC WAVE ELEMENT, AND ELECTRONIC APPARATUS
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an etching method capable of precisely applying etching to a substrate by a simple method, a surface acoustic wave element manufactured by using the etching method, and an electronic apparatus provided with the surface acoustic wave element. <P>SOLUTION: The etching method forms a resist layer on the substrate by using the photolithography method, uses the resist layer as a mask, removes at least part of the substrate in its thickness direction by the dry etching method and processes the substrate to have a prescribed pattern. In this etching method, the resist layer is formed to have a shape of having a thin film which is formed by leaving part of the resist layer in the thickness direction of the substrate corresponding to the removed part of the substrate. In the case of processing the substrate to have the prescribed pattern, the removal of the part of the substrate covered by the thin film part is started after the thin film is removed. Thus, the over-etching of the substrate can be prevented. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005064917(A) 申请公布日期 2005.03.10
申请号 JP20030293164 申请日期 2003.08.13
申请人 SEIKO EPSON CORP 发明人 KONO HIDEYASU
分类号 H01L41/22;H01L41/09;H01L41/18;H01L41/29;H03H3/08;H03H9/145 主分类号 H01L41/22
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