| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light emitting element wherein an accurate refractive index distribution is formed in a semiconductor layer with a simple step. SOLUTION: An impurity region 30 containing impurities for adjustment of refractive index is formed by heat diffusion in a semiconductor layer 20. The impurity region 30 is selectively irradiated with a laser beam LB to cause a heat distribution 40 in the semiconductor layer 20. The refractive index adjusting impurities are relocated with a concentration distribution corresponding to the heat distribution 40 to provide a refractive index distribution to an end face of a light emission region 21A. A desired refractive index distribution is easily realized according to the type and quantity of the refractive index adjusting impurities and the irradiation conditions of the laser beam LB. The refractive index distribution may be provided by implanting ions from a front end face into the semiconductor layer 20 and selectively heat treating the layer to cause a heat distribution, and by restoring the crystallization of the end face of the light emission region 21A according to the heat distribution. COPYRIGHT: (C)2005,JPO&NCIPI
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