| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method of semiconductor wafers whereby adhesion of anions on the surface of a semiconductor wafer is prevented in the case of applying SC2 cleaning to the semiconductor wafer after SC1 cleaning, and thereafter adhesion of cations on the surface of semiconductor wafer is prevented in advance. SOLUTION: SC1 liquid is used to clean the semiconductor wafer so that about 1×10<SP>10</SP>atoms/cm<SP>2</SP>of cationized metal (Fe) is left on the surface of semiconductor wafer, and SC2 liquid is used to clean the semiconductor wafer on which the metal is left. The cationized metal left on the surface of the semiconductor wafer after the SC1 cleaning is removed together with the anions by the SC2 cleaning. As a result, the cleaning yield is enhanced, and adhesion of particles or the like afterward is prevented in advance. COPYRIGHT: (C)2005,JPO&NCIPI
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