| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor provided with a gate insulating film of a high dielectric constant material, wherein an electric field at an end in the direction of the channel length of a gate electrode is mitigated, and a sufficient high-speed operation and a high reliability are realized simultaneously. SOLUTION: A gate insulating film 5 exists on a source-drain region 7, and the gate insulating film 5 on the source/drain region 7 has a different thickness from the gate insulating film 5 under a gate electrode 6 containing a metal. By doing so, a position of a polarization electric charge induced on the top or bottom of the gate insulating film 5 is adjusted, and the electric field at the angular part of the lower end of the gate electrode 6 is mitigated. As the result, a problem such as a puncture or a reduction in a reliability in the gate insulating film is suppressed. COPYRIGHT: (C)2005,JPO&NCIPI
|
