| 摘要 |
The invention relates to a method for electrochemically depositing, in particular, a number of metals M1 and M2. The invention provides that, for example, indium or another metal having a very low exchange-current density with regard to hydrogen is added to the electrolyte, which, due to its exchange-current density with regard to hydrogen, which is lower than the metal ions to be removed, advantageously prevents a formation of hydrogen on the electrode. The deposition potential E1 for the metal layer to be formed, which is located within a deposition potential range E3-E4 for the metals M1 and M2, is set less than the deposition potential E2 for indium that is necessary for a deposition so that indium on the electrode is not deposited as metal. In doing this, the indium ions in the electrolyte take over a function, which can be compared to that of a catalyst and which, due to the suppressed deposition of hydrogen, advantageously leads to improved layer results. |
