发明名称 ZINC OXIDE-BASED MULTILAYER STRUCTURAL BODY AND ITS PRODUCING METHOD
摘要 <p>[PROBLEMS] When zinc oxide semiconductor is used for an electric element, it is effective particularly to cause charge separation by comprising zinc oxide crystals of different states. [MEANS FOR SOLVING PROBLEMS] A zinc oxide-based multilayer structural body composed of a zinc oxide layer having a lattice volume Va and a donor concentration Na or a zinc oxide sold solution layer and a zinc oxide layer having a lattice volume Vb and a donor concentration Nb or a zinc oxide solid solution layer. The lattice volumes Va and Vb satisfy the relation Va&lt;Vb, and the donor concentrations Na and Nb satisfy the relation Na&gt;Nb. The zinc oxide layer having the lattice volume Va serves as a charge supply layer, and the zinc oxide layer having the lattice volume Vb serves as a charge acceptive layer. The zinc oxide-based multilayer structural body is characterized in that even while no electric field is applied from outside to the multilayer structural body, a state that charges move from the layer serving as the charge supply layer into the layer serving as the charge acceptive layer is established, and a depletion layer is formed in the charge supply layer because of this charge movement.</p>
申请公布号 WO2005022644(A1) 申请公布日期 2005.03.10
申请号 WO2004JP11884 申请日期 2004.08.19
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE;OHASHI, NAOKI;HANEDA, HAJIME;RYOKEN, HARUKI;SAKAGUCHI, ISAO;ADACHI, YUTAKA;TAKENAKA, TADASHI 发明人 OHASHI, NAOKI;HANEDA, HAJIME;RYOKEN, HARUKI;SAKAGUCHI, ISAO;ADACHI, YUTAKA;TAKENAKA, TADASHI
分类号 H01L29/227;H01L21/338;H01L29/225;H01L29/778;H01L29/812;(IPC1-7):H01L29/227 主分类号 H01L29/227
代理机构 代理人
主权项
地址