发明名称 |
SEMICONDUCTOR DEVICE INCLUDING CAPACITOR HAVING IMPROVED STRUCTURAL STABILITY AND IMPROVED CAPACITANCE, AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a capacitor having improved structural stability and improved capacitance, and to provide a method for manufacturing the device. <P>SOLUTION: The capacitor includes a cylinder-type storage electrode; a dielectric film formed on the storage electrode; a plate electrode formed on the dielectric film; and a ring-type structure which is formed on an upper part of the storage electrode, and has a diameter which is expanded upwardly. Adjacent storage electrodes are supported by each other via a stabilizing member through the ring-type structure, thereby the structural stability of the capacitor is significantly improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005064504(A) |
申请公布日期 |
2005.03.10 |
申请号 |
JP20040230911 |
申请日期 |
2004.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK JE-MIN |
分类号 |
H01L21/768;H01L21/02;H01L21/311;H01L21/3213;H01L21/8242;H01L27/02;H01L27/108 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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