发明名称 SEMICONDUCTOR DEVICE INCLUDING CAPACITOR HAVING IMPROVED STRUCTURAL STABILITY AND IMPROVED CAPACITANCE, AND METHOD FOR MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device including a capacitor having improved structural stability and improved capacitance, and to provide a method for manufacturing the device. <P>SOLUTION: The capacitor includes a cylinder-type storage electrode; a dielectric film formed on the storage electrode; a plate electrode formed on the dielectric film; and a ring-type structure which is formed on an upper part of the storage electrode, and has a diameter which is expanded upwardly. Adjacent storage electrodes are supported by each other via a stabilizing member through the ring-type structure, thereby the structural stability of the capacitor is significantly improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005064504(A) 申请公布日期 2005.03.10
申请号 JP20040230911 申请日期 2004.08.06
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 PARK JE-MIN
分类号 H01L21/768;H01L21/02;H01L21/311;H01L21/3213;H01L21/8242;H01L27/02;H01L27/108 主分类号 H01L21/768
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