| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which external resistance is reduced. <P>SOLUTION: A power MOSFET 45 of a three terminals-radial reed type resin sealing package comprises a pellet 10, three outer leads 33, 34, 35 projected in a lower end face of a resin sealing body 44, and three inner leads 36, 37 38. The pellet 10 is bonded through a bonding layer 41 to a tab 40 formed at the end of central first inner lead 36. A wire 42 for gate is bridged between a second inner lead 37 and an electrode pad 19 for gate. A wide wire 43B for high current is bridged between a third inner lead 38 arranged along one long side of the tab 40 and an electrode pad 20 for source. Since a high current is conducted through the wide wire for high current, the electric resistance of the wire which occupies most of external resistance is significantly reduced, and the whole resistance is reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
