| 发明名称 |
FILM FORMING METHOD, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF AND SUBSTRATE PROCESSING SYSTEM |
| 摘要 |
PROBLEM TO BE SOLVED: To suppress reaction between a barrier metal film and an fluoridated carbon film in a semiconductor device using the fluoridated carbon film as an inter-layer dielectric. SOLUTION: In advance of the deposition of a Ta barrier metal film, the exposed surface of the fluoridated carbon film is treated with nitrogen radical etc. to remove fluorine atoms. COPYRIGHT: (C)2005,JPO&NCIPI
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| 申请公布号 |
JP2005064302(A) |
申请公布日期 |
2005.03.10 |
| 申请号 |
JP20030293904 |
申请日期 |
2003.08.15 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
TERAI YASUHIRO;ASANO AKIRA;NISHIZAWA KENICHI |
| 分类号 |
C23C16/26;C23C16/56;H01L21/3065;H01L21/312;H01L21/314;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/314;H01L21/306;H01L21/320 |
主分类号 |
C23C16/26 |
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