| 摘要 |
PROBLEM TO BE SOLVED: To measure with higher accuracy iron concentration in a silicon wafer without influence of a defect resulting from oxygen even in the case of the silicon wafer where the defect resulting from oxygen is generated in higher density. SOLUTION: Concentration of iron in a boron-doped silicon wafer including the defect resulting from oxygen is measured with the SPV method. Concentration of iron [Fe] in the silicon wafer is obtained from [Fe] = 1.06×10<SP>16</SP>×[(1/L<SB>1</SB><SP>2</SP>) - (1/L<SB>2</SB><SP>2</SP>)]. Here, the SPV method includes activating the silicon wafer surface with irradiation of light or heat treatment, and measuring change in the diffusing length of minority carrier resulting from dissociation and recovery of the Fe-B pair through the activation. Moreover, [Fe] indicates iron concentration (atoms/cm<SP>3</SP>), while L<SB>1</SB>, diffusing length (μm) of minority carrier after dissociation of the Fe-B pair in the silicon wafer, and L<SB>2</SB>indicates diffusing length (μm) of minority carrier when the Fe-B pair is returned again to the state of Fe-B pair. COPYRIGHT: (C)2005,JPO&NCIPI
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