| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a zirconium oxide and/or a hafnium oxide used as insulating materials in semiconductors of next generation cannot be etched without damaging other peripheral semiconductor materials because of their high etching resistances. SOLUTION: An etchant containing a hydrofluoric acid, a polyhydric carboxylic acid, and a hydrogen peroxide solution dissolves the zirconium oxide and/or hafnium oxide without damaging other semiconductor materials, such as the silicon oxide, silicon, etc. In addition, when an inorganic acid is added to the hydrofluoric acid, polyhydric carboxylic acid, and hydrogen peroxide solution, the etching rate of the etchant is improved. COPYRIGHT: (C)2005,JPO&NCIPI
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