发明名称 |
FORMATION METHOD OF LIGHT EMITTING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a TFT substrate manufacturable at a low cost; and to provide a light emitting device having a large screen by the use of a deposition device capable of providing uniform film thickness on the entire substrate surface even for a large-area substrate. SOLUTION: In this application, a light emitting element is formed by carrying out deposition while moving a deposition source toward a large-area substrate 100 equipped with a pixel part (or a driving circuit) having TFTs using, as an active layer, an amorphous semiconductor film, a semiamorphous semiconductor film or an organic semiconductor film. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005063952(A) |
申请公布日期 |
2005.03.10 |
申请号 |
JP20040215775 |
申请日期 |
2004.07.23 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;IMAI KEITAROU;MAEKAWA SHINJI;FURUNO MAKOTO;NAKAMURA OSAMU;MURAKAMI MASAKAZU |
分类号 |
H05B33/10;C23C14/12;H01L51/50;H05B33/14;(IPC1-7):H05B33/10 |
主分类号 |
H05B33/10 |
代理机构 |
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