摘要 |
A method [900] of forming an integrated circuit [100] and a structure therefore is provided. A gate dielectric [104]is formed on a semiconductor substrate [102], and a gate [106] is formed over the gate dielectric [104]. Shallow source/drain junctions [304,306] are formed in the semiconductor substrate [102]. A sidewall spacer [402] is formed around the gate [106]. Deep source/drain junctions [504,506] are formed in the semiconductor substrate [102] using the sidewall spacer [402]. A siliciding spacer [610] is formed over the sidewall spacer [402] after forming the shallow and deep source/drain junctions [504,506]. A silicide [604] [606] is formed on the deep source/drain junctions [504,506] adjacent the siliciding spacer [610], and a dielectric layer [702] is deposited above the semiconductor substrate [102]. Contacts are then formed in the dielectric layer [702] to the silicide [604][606]. |
申请人 |
ADVANCED MICRO DEVICES, INC.;PATTON, JEFFREY, P.;MAHANPOUR, MEHRDAD;KAMMLER, THORSTEN;BROWN, DAVID, E.;BESSER, PAUL, R.;CHAN, SIMON, SIU-SING;FRENKEL, AUSTIN, C. |
发明人 |
PATTON, JEFFREY, P.;MAHANPOUR, MEHRDAD;KAMMLER, THORSTEN;BROWN, DAVID, E.;BESSER, PAUL, R.;CHAN, SIMON, SIU-SING;FRENKEL, AUSTIN, C. |