| 摘要 |
<p>The present application describs techniques for an in-situ measurement of resistivity profiles and dopant concentration distributions in semiconductor structures, such as shallow junctions. A substrate (10) with a resistor test structure (210) having a conduction circuit is placed at a measurement station, surface layers may be successively removed from the conduction circuit at the measurement station e.g. by anodic oxidation a sheet resistance of the conduction circuit is measured at the measurement station after the removal of each surface layer to generate a plurality of sheet resistance measurements, and the resistivity profile is calculated from the plurality of sheet resistance measurements.</p> |
