| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase changing type information recording medium which has a low melting point, hardly receives an effect of oxidation, and has a high crystallization speed, which for example, enables to decrease consumption of electric power of a non-volatile memory utilizing the phase changing type information recording medium. <P>SOLUTION: In the phase changing type information recording medium which can reversibly and electrically perform a phase change between an amorphous condition and a crystalline condition at room temperature, and comprises an alloy of Se, Sb and Te, the compositional ratio of SeSbTe is in such a way that Se is not lower than a specified ratio (preferably 10%, more preferably 15%), and Te is not lower than another specified ratio (preferably 60%). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
