发明名称 |
SINGLE-CRYSTAL SAPPHIRE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sapphire substrate for a semiconductor light-emitting element which has a principal surface in which grooves or projections/depressions with stripe shapes are efficiently formed by a method suitable for mass production, and to provide a manufacturing method therefor. <P>SOLUTION: A single-crystal sapphire substrate formed with projections/depressions having etch pits is manufactured by wet-etching with a hot phosphoric acid or the like by use of a protective film which is mainly composed of SiO<SB>2</SB>as a mask. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2005064492(A) |
申请公布日期 |
2005.03.10 |
申请号 |
JP20040218384 |
申请日期 |
2004.07.27 |
申请人 |
KYOCERA CORP |
发明人 |
WATANABE KENICHI |
分类号 |
C30B29/20;C30B33/10;H01L33/12;H01L33/22;H01L33/32 |
主分类号 |
C30B29/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|