发明名称 SINGLE-CRYSTAL SAPPHIRE SUBSTRATE, MANUFACTURING METHOD THEREFOR, AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a sapphire substrate for a semiconductor light-emitting element which has a principal surface in which grooves or projections/depressions with stripe shapes are efficiently formed by a method suitable for mass production, and to provide a manufacturing method therefor. <P>SOLUTION: A single-crystal sapphire substrate formed with projections/depressions having etch pits is manufactured by wet-etching with a hot phosphoric acid or the like by use of a protective film which is mainly composed of SiO<SB>2</SB>as a mask. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005064492(A) 申请公布日期 2005.03.10
申请号 JP20040218384 申请日期 2004.07.27
申请人 KYOCERA CORP 发明人 WATANABE KENICHI
分类号 C30B29/20;C30B33/10;H01L33/12;H01L33/22;H01L33/32 主分类号 C30B29/20
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