发明名称 PLASMA ETCHING METHOD AND APPARATUS THEREOF
摘要 PROBLEM TO BE SOLVED: To prevent a semiconductor wafer from being damaged by preventing a protective tape from being twisted when the protective tape is stuck on the surface of the semiconductor wafer, and a protective tape side is held by electrostatic attraction to subject the rear surface of the semiconductor wafer to plasma etching. SOLUTION: DC voltage for electrostatic attraction is supplied to a chuck table, and then minute discharge electric power is supplied (minute discharge electric power supply process), and the value of the DC voltage is raised gradually in this state. Consequently, electrostatic force is gradually raised and rapid electrostatic attraction is prevented (DC voltage raising process). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005064234(A) 申请公布日期 2005.03.10
申请号 JP20030292238 申请日期 2003.08.12
申请人 DISCO ABRASIVE SYST LTD 发明人 NITTA ERUMU;WAKAHARA MASATOSHI
分类号 H01L21/3065;H01L21/00;H01L21/308;H01L21/683;(IPC1-7):H01L21/306;H01L21/68 主分类号 H01L21/3065
代理机构 代理人
主权项
地址