| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist-stripping liquid having no flash point with which a resist and an antireflection film can be stripped under the conditions of at≤80°C in a short time (about 30 sec), without giving damages to a polycrystalline Si (poly-Si) or a Si oxide film (SiO2) exposed in a single-wafer processing cleaner. SOLUTION: A resist-stripping liquid comprising tetramethylammonium hydroxide, water, hydrogen peroxide and/or peroxide is used to strip a resist and/or an antireflection film in a substrate process (the so-called a front end of line process) in the single-wafer processing cleaner, under the conditions of at 20 to 80°C within 30 seconds. As the preferred conditions, the liquid is used at 0.1 to 15 wt.% concentration of the tetyramethylammonium hydroxide and 0.05 to 10 wt.% concentration of the hydrogen peroxide and/or peroxide. COPYRIGHT: (C)2005,JPO&NCIPI |
