发明名称 LIGHT RECEIVING SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To attain a state independent of polarization for sensibility and to attain stably a state independent of polarization regardless of a spot size of incident light. SOLUTION: A light receiving semiconductor element is composed of laminated layer structures 11, 12 including a light absorption layer 12 formed on a substrate 14. The incident light 18, 19 come into the absorption layer 12 from below diagonally, reflect on the surface of the laminated layer of the semiconductor, and are introduced to the light absorption layer 12 again. An electrode 15 is formed on the laminated layer structure, the portion which is adjacent to the surface, is lattice-like in shape. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005064400(A) 申请公布日期 2005.03.10
申请号 JP20030295795 申请日期 2003.08.20
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MURAMOTO YOSHIFUMI;HIROTA YUKIHIRO;ITO HIROSHI
分类号 H01L31/10;(IPC1-7):H01L31/10 主分类号 H01L31/10
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