发明名称 |
Memory cell unit, nonvolatile semiconductor device, and liquid crystal display device including the nonvolatile semiconductor device |
摘要 |
A memory cell unit including: a semiconductor substrate having a source diffusion layer provided in a surface thereof; a column-shaped semiconductor layer provided on the source diffusion layer and having a drain diffusion layer provided in an uppermost portion thereof; a memory cell arrangement which includes a plurality of memory cells arranged in series with the intervention of a first impurity diffusion layer; a first selection transistor connected to one end of the memory cell arrangement with the intervention of a second impurity diffusion layer and connected to the drain diffusion layer; and a second selection transistor connected to the other end of the memory cell arrangement with the intervention of a third impurity diffusion layer and connected to the source diffusion layer; wherein a distance between the third impurity diffusion layer and the source diffusion layer is greater than a distance between impurity diffusion layers disposed on opposite sides of each of the memory cells, whereby punch-through of the second selection transistor is prevented when a writing prevention voltage is applied between the source diffusion layer and the first impurity diffusion layer.
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申请公布号 |
US2005051806(A1) |
申请公布日期 |
2005.03.10 |
申请号 |
US20040930229 |
申请日期 |
2004.08.30 |
申请人 |
FUJIO MASUOKA;SHARP KABUSHIKI KAISHA |
发明人 |
MASUOKA FUJIO;SAKURABA HIROSHI;MATSUOKA FUMIYOSHI;UENO SYOUNOSUKE |
分类号 |
G02F1/133;H01L21/8247;H01L27/115;H01L29/768;H01L29/786;H01L29/788;H01L29/792;(IPC1-7):H01L29/768 |
主分类号 |
G02F1/133 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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