THIN FILM FORMING METHOD FOR REDUCING LEAKAGE CURRENT, ELECTRIC POTENTIAL AND REACTION CHAMBER PRESSURE AND IMPRESSED HIGH FREQUENCY POWER TO REDUCE PLASMA DAMAGE, PREVENT STICKING OF FILM AND IMPROVE ADHESION OF FILM FORMED BY DILUTION GAS PLASMA RESPECTIVELY

摘要

PURPOSE: To provide a thin film forming method for reducing plasma damage and improving adhesion between thin films, a thin film forming method for suppressing contamination of particles by gas of silicon based material, and a thin film forming method for preventing sticking of the film. CONSTITUTION: In a method for forming a thin film on a semiconductor substrate using a plasma CVD(chemical vapor deposition) equipment, the method comprises a process of installing the semiconductor substrate in a reaction chamber; a process of heating the semiconductor substrate to a fixed temperature; a process of introducing an addition gas into the reaction chamber; a process of introducing a fixed flow amount of dilution gas into the reaction chamber; a process of introducing a fixed flow amount of gas of silicon based material into the reaction chamber to hold the inside of the reaction chamber to a fixed pressure; a process of impressing high frequency power into the reaction chamber; a process of stopping supply of the gas of silicon based material; a process of slowly gradually reducing pressure in the reaction chamber and an impressing amount of high frequency power to a desired level at the same time when stopping supply of the gas of silicon based material; a process of stopping impressing of the high frequency power; and a process of stopping supply of the dilution gas.