| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance conductivity by preventing impurity levels from being formed in the band gap of a metal oxide semiconductor which constitutes a photoelectric converter so that characteristic deterioration or carrier mobility reduction does not occur caused by trapping. <P>SOLUTION: A photoelectric converter 1 has a metal oxide semiconductor 3 which includes at least one element (selected from among nitrogen, carbon, fluorine, sulfur, chlorine, and phosphorus) and has a pigment performing photoelectric conversion on a conductive support 2 so that the metal oxide semiconductor exists in a translucent conductor 5. This structure reduces the band gap of the metal oxide semiconductor and thus increases the amount of light absorption, thereby enhancing the photoelectric conversion efficiency. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
