| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element that is excellent in photoelectric conversion efficiency. <P>SOLUTION: The photoelectric conversion element comprises a first p-type semiconductor layer 13, a second semiconductor layer (function layer) 14 formed on the first p-type semiconductor layer, and a third n-type semiconductor layer 17 formed on the second semiconductor layer. The second semiconductor layer 14 has a first member 15 comprising a columnar n-type semiconductor nearly vertically formed to the first semiconductor layer, and a second member 16 that is formed while surrounding the first member and contains a p-type semiconductor. The photoelectric conversion element is manufactured by processes. The processes comprise a process for creating a structure having the first columnar member nearly vertical to a substrate and the second member for surrounding the first one on a substrate having a semiconductor layer, a process for eliminating the first member and forming a hole, and a process for filling the hole with an n-type semiconductor material. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
