METHOD OF ETCHING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of etching semiconductor device by which the side wall of the step of a semiconductor device constituted of the principal surface and side wall of the device is etched. SOLUTION: The side wall of the step of the semiconductor device constituted of the principal surface and side wall of the device is etched, by controlling an impressing direction of a magnetic field or impressing directions of a magnetic field and an electric field upon etching species and by utilizing the reaction between the etching species and side wall. COPYRIGHT: (C)2005,JPO&NCIPI