Atomic layer deposited ZrAlxOy dielectric layers

摘要

An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-containing precursor onto a substrate, pulsing a first oxygen-containing precursor, pulsing an aluminum-containing precursor, and pulsing a second oxygen-containing precursor to form ZrAlxOy by atomic layer deposition provides a dielectric layer with a relatively high dielectric constant as compared with silicon oxide and with a relatively low leakage current. Dielectric layers containing atomic layer deposited ZrAlxOy are thermodynamically stable such that the ZrAlxOy will have minimal reactions with a silicon substrate or other structures during processing.