| 发明名称 |
Semiconductor device |
| 摘要 |
A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.
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| 申请公布号 |
US2005051855(A1) |
申请公布日期 |
2005.03.10 |
| 申请号 |
US20040910574 |
申请日期 |
2004.08.04 |
| 申请人 |
KANEGAE YOSHIHARU;IWASAKI TOMIO;MORIYA HIROSHI |
发明人 |
KANEGAE YOSHIHARU;IWASAKI TOMIO;MORIYA HIROSHI |
| 分类号 |
H01L21/283;H01L21/28;H01L21/314;H01L21/3205;H01L21/8234;H01L21/8238;H01L21/8247;H01L23/52;H01L27/04;H01L27/088;H01L27/115;H01L29/417;H01L29/51;H01L29/76;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/283 |
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