| 摘要 |
A plasma processing apparatus capable of processing a wafer having a diameter of 300 mm or greater with high accuracy and uniformity, the apparatus comprising a decompressable container 1, a stage 2 disposed within container 1 and supporting a wafer 3 thereon, a substantially circular conductive plate 7 disposed substantially in parallel with the wafer 3 and opposing the stage 2, and a high frequency power source 11 connected to the conductive plate 7 and supplying power to generate a plasma within a space interposed between the stage 2 and the conductive plate 7, characterized in that a frequency f1 of the power is within the range of 100 MHz<F1<(0.6xC)/(2.0xD) Hz with respect to a speed of light C in vacuum and a diameter D of the wafer being processed.
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