| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist-stripping liquid having no flash point, with which a resist and an antireflection film can be stripped under conditions of at≤80°C in a short time (about 30 sec), without giving damages to a polycrystalline Si (poly-Si) or a Si oxide film (SiO<SB>2</SB>) exposed in a single-wafer processing cleaner. SOLUTION: The resist-stripping liquid comprising cyanoethyl ethylenediamine, cyanoethyl cyclohexylamine, water and tetramethylammonium hydroxide and/or ammonia is used to strip a resist and/or an antireflection film in a substrate process (the so-called a front end of line process) in the single-wafer processing cleaner under conditions of at 20 to 80°C within 30 seconds. As the preferred conditions, the liquid is used at 0.1 to 15 wt.% concentration of the cyanoethyl ethylenediamine, 0.1 to 5 wt.% concentration of the cyanoethyl cyclohexylamine, and 0.001 to 0.1 wt.% concentration of the tetramethylammonium hydroxide and/or ammonia. COPYRIGHT: (C)2005,JPO&NCIPI |
