发明名称 FIELD-EFFECT TRANSISTOR, SINGLE ELECTRON TRANSISTOR, AND SENSOR USING SAME
摘要 A sensor for detecting a substance to be detected. The sensor includes a field-effect transistor (1A) having a substrate (2), a source electrode (4) and a drain electrode (5) both installed on the substrate (2), and a channel (6) to serve as a current path between the source electrode (4) and the drain electrode (5). The field-effect transistor (1A) further includes an interaction sensing gate (9) for immobilizing a specific substance (10) interactive selectively with the substance to be detected and a gate (7) to which a voltage is applied so that the interaction is detected as a characteristic variation of the field-effect transistor (1A). Such a structure enables a sensor to detect a substance to be detected with a high detection sensitivity.
申请公布号 WO2005022134(A1) 申请公布日期 2005.03.10
申请号 WO2004JP12402 申请日期 2004.08.27
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY;MATSUMOTO, KAZUHIKO;KOJIMA, ATSUHIKO;NAGAO, SATORU;KATOU, MASANORI;YAMADA, YUTAKA;NAGAIKE, KAZUHIRO;IFUKU, YASUO;MITANI, HIROSHI 发明人 MATSUMOTO, KAZUHIKO;KOJIMA, ATSUHIKO;NAGAO, SATORU;KATOU, MASANORI;YAMADA, YUTAKA;NAGAIKE, KAZUHIRO;IFUKU, YASUO;MITANI, HIROSHI
分类号 G01N27/414;H01L29/06;H01L29/66;H01L29/80 主分类号 G01N27/414
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