发明名称 |
METHOD OF FABRICATING A DOUBLE GATE FIELD EFFECT TRANSISTOR DEVICE, AND SUCH A DOUBLE GATE FIELD EFFECT TRANSISTOR DEVICE |
摘要 |
<p>The present invention discloses a method of forming a double gate field effect transistor device, and such a device formed with the method. One starts with a semiconductor-on-insulator substrate, and forms a first gate, source, drain and extensions, and prepares the second gate. Then the substrate is bonded to a second carrier, exposing a second side of the semiconductor layer. Next, an annealing step is performed as a diffusionless annealing, which has the advantage that the semiconductor layer not only has a substantially even thickness, but also has a substantially flat surface. This ensures the best possible annealing action of said annealing step. Very sharp abruptness of the extensions is achieved, with very high activation of the dopants.</p> |
申请公布号 |
WO2005022648(A1) |
申请公布日期 |
2005.03.10 |
申请号 |
WO2004IB51454 |
申请日期 |
2004.08.12 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;SURDEANU, RADU CATALIN;PONOMAREV, YOURI |
发明人 |
SURDEANU, RADU CATALIN;PONOMAREV, YOURI |
分类号 |
H01L21/336;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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