Ga-DOPED CRYSTAL SILICON,ITS MANUFACTURING METHOD AND Ga-DOPED CRYSTAL SILICON MANUFACTURING APPARATUS THEREFOR, AS WELL AS SOLAR BATTERY USING Ga-DOPED CRYSTAL SILICON SUBSTRATE AND ITS MANUFACTURE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for suppressing the scattering(nonuniforming) of the resistivity of a Ga-doped polycrystal Si manufactured by the cast method, and to provide a technical method for enhancing the manufacturing yield of a polycrystal silicon solar battery.

SOLUTION: The method for manufacturing the Ga-doped crystal silicon comprises a melting step of mixing a raw material silicon with a gallium dopant and heating the resultant mixture to a predetermined temperature to melt the same and a crystal growing step of cooling the melted raw material silicon and growing the crystal silicon. The method is further characterized by adding a new raw material silicon to the melted raw material silicon in the crystal growing step. The Ga-doped crystal silicon manufacturing apparatus used for the manufacturing method is provided. The solar battery using the Ga-doped crystal silicon is also provided. The method for manufacturing the solar battery comprises a substrate manufacturing step of manufacturing the substrate from the Ga-doped crystal silicon, a p-n junction forming step of forming a p-n junction to the manufactured substrate and an electrode forming step of forming an electrode on the substrate in which the p-n junction is formed.

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