| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a static semiconductor memory device in which high speed operation can be performed and which is a single end read-out system. <P>SOLUTION: The static semiconductor memory device has a plurality of word lines extended in the a row direction, a plurality of first bit lines and a plurality of pairs of second bit lines extended in the column direction, and a memory cell group in which a plurality of transistors which are arranged in the row and column direction respectively, while connected to each word line for each row, and connected to each pair of second bit lines for each column are crossed and connected. The first bit lines are shared by a plurality of memory cell columns, and conduction for the second bit lines is controlled in different timing. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
