| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film-forming apparatus which does not require a large scale of apparatus configuration and easily controls a film-forming rate for an organic thin film to be formed on the surface of a substrate. SOLUTION: The thin-film-forming apparatus has a treatment chamber 11, a substrate holder 12 installed in the treatment chamber 11, a gas-supplying section 13 which is installed in the treatment chamber 11 and supplies a gas to a substrate-mounting face 12a of the substrate holder 12, a raw material vessel 14 which is installed in the gas-supplying section 13 and stores a raw material therein, and a carrier-gas-feeding pipe 15 for supplying a carrier gas to the raw material vessel 14, wherein the raw material vessel 14 has a gas diffusion opening 21 for diffusing a source gas and the carrier gas into the gas-supplying section 13, and the gas-supplying section 13 has the gas-supplying opening 22 which supplies the source gas together with the carrier gas to the substrate-mounting face 12a, and is placed in a staggered position with the gas diffusion opening 21. COPYRIGHT: (C)2005,JPO&NCIPI
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