发明名称 Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer
摘要 A structure comprising at least one layer of germanium formed on a surface of a ceramic substrate. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. Also, a structure comprising at least one layer of germanium formed on a surface of a ceramic substrate, and at least one capping layer formed on a surface of the layer of germanium. Also, a method of forming a thin film germanium structure, comprising forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.
申请公布号 US2005054185(A1) 申请公布日期 2005.03.10
申请号 US20040970509 申请日期 2004.10.21
申请人 GE ENERGY (USA) LLC 发明人 MAUK MICHAEL G.
分类号 C04B41/51;C04B41/52;C04B41/88;C04B41/89;H01L21/20;(IPC1-7):H01L21/00 主分类号 C04B41/51
代理机构 代理人
主权项
地址
您可能感兴趣的专利