发明名称 Magnetoresistiver Sensor und sein Herstellungsverfahren
摘要 <p>A magnetoresistive sensor (14) including a lower electrode layer (16), a nanotube structure film (18) composed of an insulator matrix (20) and a plurality of nanotubes (22) dispersively arranged in the insulator matrix (20), a magnetoresistive film (28) provided on the nanotube structure film (18), and an upper electrode layer (30) provided on the magnetoresistive film (28). Each nanotube (22) is composed of a circular tubular nonmetal (24) and a circular cylindrical metal (26) surrounded by the circular tubular nonmetal (24). The nanotube structure film (18) is partially etched at its central region to make conduction of the upper electrode layer (30) and the lower electrode layer (16) through the magnetoresistive film (28) and the circular cylindrical metal (26) of each nanotube (22) present at the central region. <IMAGE></p>
申请公布号 DE60202826(D1) 申请公布日期 2005.03.10
申请号 DE2002602826 申请日期 2002.03.08
申请人 FUJITSU LTD., KAWASAKI 发明人 SUGAWARA, TAKAHIKO
分类号 G01R33/09;G11B5/39;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L43/08;H01L43/12;(IPC1-7):G01R33/09 主分类号 G01R33/09
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