| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film transistor (TFT) wherein leakage current and optical leakage current are small in dark status. <P>SOLUTION: The TFT is provided with a semiconductor layer 13 and first and second gate electrodes 18a and 18b. The semiconductor layer 13 is provided with first conduction type first and second heavily doped regions 21 and 22, second conduction type first and second channel regions 30 and 31, a first conduction type first lightly doped region 24, a first conduction type third lightly doped region 26, a first conduction type second lightly doped region 25, a first conduction type fourth lightly doped region 27, a first conduction type third heavily doped region 23, and first conduction type fifth lightly doped regions 28a and 28b. The impurity concentration of the third, fourth and fifth lightly doped regions is made higher than those of the first and second lightly doped regions, and the carrier concentration of the fourth and fifth lightly doped regions is made lower than those of the first and second lightly doped regions. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
