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发明名称 Semiconductor device and method of manufacturing the same
摘要 Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.
申请公布号 US2005051823(A1) 申请公布日期 2005.03.10
申请号 US20040833096 申请日期 2004.04.28
申请人 NAKAZAWA KEISUKE;YAMAKAWA KOJI;NATORI KATSUAKI;YAMAZAKI SOICHI;ITOKAWA HIROSHI;KANAYA HIROYUKI 发明人 NAKAZAWA KEISUKE;YAMAKAWA KOJI;NATORI KATSUAKI;YAMAZAKI SOICHI;ITOKAWA HIROSHI;KANAYA HIROYUKI
分类号 H01L27/105;H01L21/02;H01L21/314;H01L21/316;H01L21/8246;H01L27/115;(IPC1-7):H01L21/00;H01L29/76;H01L21/824;H01L31/062;H01L27/108 主分类号 H01L27/105
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