| 发明名称 |
CAPACITOR, SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, METHOD OF MANUFACTURING A CAPACITOR, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS |
| 摘要 |
A semiconductor device includes a TFT, a diode and a capacitor that each have an insulating layer which includes a tantalum oxide film formed by oxidizing a tantalum film at a temperature of 300° C. to 400° C. and under a pressure of 0.5 MPa to 2 MPa, and a silicon oxide film formed by a CVD method and the like. Therefore, the insulating layer includes the tantalum oxide film produced by high-pressure annealing and thus has high voltage resistance. |
| 申请公布号 |
KR100471954(B1) |
申请公布日期 |
2005.03.10 |
| 申请号 |
KR20020055195 |
申请日期 |
2002.09.12 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L27/02;G02F1/1365;H01L21/02;H01L21/316;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/49;H01L29/786;(IPC1-7):H01L27/02 |
主分类号 |
H01L27/02 |
| 代理机构 |
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代理人 |
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