WATER-SOLUBLE PHOTORESIST COMPRISING SULFONATED POLYMER, ULTRAVIOLET RAY CURING AGENT AND SOLVENT, ORGANIC THIN FILM PHOTOLITHOGRAPHY PROCESS AND ORGANIC THIN FILM PATTERNING PROCESS USING THE SAME

摘要

PURPOSE: Provided are a photoresist having good solubility in water, an organic thin film photolithography process, and an organic thin film patterning process using the same which do not give any damages on an organic activated layer and are applicable to all organic TFT. CONSTITUTION: The water-soluble photoresist comprises one or more polymer selected from the group consisting of sulfur oxide of polyaniline, PVA, PEDOT and polypyrrole; a photoinitiator and an ultraviolet ray curing agent comprised of a monomer and an oligomer; and one or more solvent material selected from the group consisting of N-methyl-2-pyrrolidone, n-butanol, n-dimethylacetamide and tetrahydrofuran. The photolithography process comprises the steps of: applying the water-soluble photoresist(6) by spin-coating; depositing a photomask(11) on the photoresist(6) and selectively exposing a desired portion of the photoresist(6) to an ultraviolet ray; and developing the exposed photoresist(6) using water or isopropyl alcohol. Post-photolithography process, the unwanted portion of an organic thin film(5), an inorganic thin film or a metallic thin film is removed via an etching step to form a pattern of the organic thin film(5).