| 摘要 |
FIELD: microelectronics; manufacture of very large-scale integrated circuits including silicon-on-insulator structures. ^ SUBSTANCE: proposed method that provides for producing thin semiconductor-on-insulator films affording solid gap-free boundary between wafers includes implanting hydrogen ions or noble gases in semiconductor wafer surface through insulator layer; connection of semiconductor wafer with carrier plate; heat treatment at temperature ensuring wafer joining and irradiated wafer hot breakdown; covering of semiconductor wafer with metal layer upon implanting; deposition of low-melting metal or alloy; formation of insulator layer on carrier plate and its covering with metal layer. Low-melting metal or alloy layer deposition and wafer joining take three stages. First stage is conducted at temperature higher than melting point of low-melting metal or alloy but lower than flaw-encouraging temperature at wafer joint to form liquid metal phase. Second stage is conducted at temperature providing for formation of solid metal phase but lower than hot breakdown temperature of semiconductor wafer. Temperature maintained during third stage ensures hot break-down of irradiated semiconductor wafer but is not lower than melting point of metallide formed in the process. ^ EFFECT: improved quality of thin semiconductor-on-insulator film structures. ^ 7 cl, 8 dwg |
