Semiconductor storage device

摘要

At least one transistor (MPX) is connected between a plurality of word line driving element circuits formed by using CMOS inverters (MP0 and MN0, etc.) and a source potential (Vcc). This transistor (MPX) is independently controlled by a control signal (DECENB) separate from control signals (AB-0 to AB-n) of the word line driving element circuits and has both a through current preventing function by adjusting timing and a peak current reducing function by limiting an electric current. Even when all word lines (SWL0 to SWLn) are driven at the same time, the electric current is limited and the peak current is suppressed.