发明名称 |
Control of air gap position in a dielectric layer |
摘要 |
A method for controlling the position of air gaps in intermetal dielectric layers between conductive lines and a structure formed using such a method. A first dielectric layer is deposited over at least two features and a substrate and an air gap is formed between the at least two features and above the feature height. The first dielectric layer is etched between the at least two features to open the air gap. Then a second dielectric layer is deposited over the etched first dielectric layer to form an air gap between the at least two features and completely below the feature height.
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申请公布号 |
US2005051865(A1) |
申请公布日期 |
2005.03.10 |
申请号 |
US20040921041 |
申请日期 |
2004.08.17 |
申请人 |
LEE TAI-PENG;HU CHING-YUEH;JANG CHUCK |
发明人 |
LEE TAI-PENG;HU CHING-YUEH;JANG CHUCK |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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