发明名称 Control of air gap position in a dielectric layer
摘要 A method for controlling the position of air gaps in intermetal dielectric layers between conductive lines and a structure formed using such a method. A first dielectric layer is deposited over at least two features and a substrate and an air gap is formed between the at least two features and above the feature height. The first dielectric layer is etched between the at least two features to open the air gap. Then a second dielectric layer is deposited over the etched first dielectric layer to form an air gap between the at least two features and completely below the feature height.
申请公布号 US2005051865(A1) 申请公布日期 2005.03.10
申请号 US20040921041 申请日期 2004.08.17
申请人 LEE TAI-PENG;HU CHING-YUEH;JANG CHUCK 发明人 LEE TAI-PENG;HU CHING-YUEH;JANG CHUCK
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L29/00 主分类号 H01L21/768
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