Halbleitereinrichtung und Herstellungsverfahren einer Halbleitereinrichtung

摘要

The module includes several contact sections on a substrate surface (1) which comprises an insulating layer (2,3,5) deposited on the substrate surface. A conductive section (6) with a contact section (6a) is located in the insulating layer near the main surface of the semiconductor substrate. A silicon nitride layer (4) covers the substrate main surface and the conductive section is deposited in the insulating layer. Through the insulating layer and the silicon nitride layer runs a conductive path up to the contact section. Preferably the insulating layer contains a conductor (10) coupled by a conductive path to one contact section (1b) of the semiconductor substrate.