Method for forming filling layer and method for forming STI in semiconductor processing,申请号KR20020039809-传众专利搜索

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发明名称	Method for forming filling layer and method for forming STI in semiconductor processing
摘要
申请公布号	KR100470724(B1)	申请公布日期	2005.03.10
申请号	KR20020039809	申请日期	2002.07.09
申请人		发明人
分类号	H01L21/76;H01L21/3105;H01L21/762;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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