| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film semiconductor provided with a crystal silicon thin film having an uneven surface, and to provide its formation method. <P>SOLUTION: The thin-film semiconductor 10 is formed by providing on a substrate 11 a crystal silicon thin film 14 wherein a plurality of protruding strips 12 with serrate cross sections are formed at specified intervals P on its surface. In addition, a plurality of quadrangular-pyramid-like projections are also formed on the surface of the crystal silicon thin film in specified patterns. In this case, the average square root of the surface roughness of the protruding strip or the projection is preferably 60 nm or more. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
