| 摘要 |
PROBLEM TO BE SOLVED: To adjust a work function of a gate electrode without exerting adverse influences upon properties or the like. SOLUTION: In a manufacturing method for a semiconductor device comprising a first conductive MIS transistor provided in a first region and a second conductive MIS transistor provided in a second region and having a structure comprising a first gate insulating film 102 provided in the first region, a first conducting portion 111 provided on the first gate insulating film, a second gate insulating film 102 provided in the second region, and a second conducting portion 111 provided on the second gate insulating film, the first conducting portion and second conducting portion are formed of the same conducting film, a work function of a bottom of the first conducting portion being equal to a work function of a bottom of the second conducting portion, a third conducting portion 113 is formed on the second conducting portion by a plating method, and varying the work function of the bottom of the second conducting portion by diffusing a metal element contained in the third conducting portion to the second conducting portion. COPYRIGHT: (C)2005,JPO&NCIPI
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