| 摘要 |
PROBLEM TO BE SOLVED: To obtain gate insulated films which have high relative dielectric constant and in which crystal grain boundary is not formed after thermal treatment for impurity activation at a temperature of at least 1,000°C. SOLUTION: A gate electrode 10 is formed on a silicon substrate 1 through the gate insulated films 8, 9a, 9b of three layers. The first gate insulated film 8 is a silicon oxide film as a underlying interface layer. The second gate insulated film 9a formed on the silicon oxide film 8 is a nitrogen containing metal silicified film wherein film average metal concentration is at most 62%, and film average nitrogen content is at least 30 atm%. The third gate insulated film 9b formed on the nitrogen containing metal silicificated film 9a is a nitrogen-containing metal silicificated film wherein film average metal concentration is at least 50% and at most 80%. Film average nitrogen content of the nitrogen-containing metal silicificated film 9b of an upper layer is at least 1 atm%. COPYRIGHT: (C)2005,JPO&NCIPI
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