| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating wafer by which defects caused by working introduced in a wafer working step or by contamination (heavy metals etc.,) etc., are discriminated easily, and also to provide a method of managing wafer manufacturing process utilizing the method. SOLUTION: The method of evaluating wafer is composed of a first evaluating step of evaluating the surface of a wafer to be evaluated by using a confocal type inspection apparatus, a second evaluating step of evaluating the number of LPDs existing on the surface of the wafer by using a light scattering type particle counter, and a third evaluating step of again evaluating the number of LPDs existing on the surface of the wafer by using the light scattering type particle counter after the wafer is dipped in an etchant composed of ammonia-hydrogen peroxide solution for a long time. The increased number of the LPDs is calculated from the difference between the numbers of the LPDs obtained in the second and third evaluating steps, and the increased number is compared with the number of defects obtained in the first evaluating step. COPYRIGHT: (C)2005,JPO&NCIPI
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