NITRIDE SEMICONDUCTOR SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE USING SAME

摘要

An AlN polycrystal (3) is deposited on a surface of an SiO2 film (2) by a sputtering method, so that a mask is formed thereon. Then, an Si-doped n-GaN layer (5) is formed on the mask. Following that, an LD layer structure is formed by sequentially growing an n-type cladding layer (6) composed of an Si-doped n-type Al0.1Ga0.9N (silicon concentration: 4 x 10<17> cm<-3>, thickness: 1.2 µm), an n-type light-trapping layer (7) composed of an Si-doped n-type GaN, a multiple quantum well layer (8) composed of an In0.2Ga0.8N well layer and an Si-doped In0.05Ga0.95N barrier layer, a cap layer (9) composed of an Mg-doped p-type Al0.2Ga0.8N, a p-type light-trapping layer (10) composed of an Mg-doped p-type GaN, a p-type cladding layer (11) composed of an Mg-doped p-type Al0.1Ga0.9N, and a p-type contact layer (12) composed of an Mg-doped p-type GaN.